View EDI8L3265C20AC_1095187.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

EDI8L3265C
64Kx32 SRAM
Features
64Kx32 bit CMOS Static Random Access Memory Array Fast Access Times: 12*, 15, 20, and 25ns Individual Byte Selects User Configurable Organization with Minimal Additional Logic
64Kx32 CMOS High Speed Static RAM
The EDI8L3265C is a high speed, high performance, four megabit density Static RAM organized as a 64Kx32 bit array. Four Byte Selects, two Chip Enables, Write Control, and Output Enable provide the user with a flexible memory solution. The user may independently enable each of the four bytes, and, with minimal additional peripheral logic, the unit may be configured as a 128Kx16 array. Fully asynchronous circuitry is used, requiring no clocks or refreshing for operation and providing equal access and cycle times for ease of use. The EDI8L3265C, allows 2 megabits of memory to be placed in less than 0.990 square inches of board space. The EDI8L3265C can be upgraded to 128K, 256K or 512Kx32 in the same footprint using the EDI8L32128, EDI8L32256 or the EDI8L32512C. (See page 6 for upgrade paths).
Note: Solder Reflow temperatures should not exceed 260C for 10 seconds.
Fully Static, No Clocks Surface Mount Package
Single +5V (5%) Supply Operation
* Advance Information
Pin Configurations and Block Diagram
March 1997 Rev. 4 ECO #8302
T NO
Master Output Enable and Write Control TTL Compatible Inputs and Outputs
68 Lead PLCC, No. 99 (JEDEC-M0-47AE) Small Footprint, 0.990 Sq. In. Multiple Ground Pins for Maximum Noise Immunity
Notes: 1. See page 6 for upgrade paths.
D DE EN M M CO RE
1
Pin Names
Address Inputs Chip Enables (one per word) Byte Selects (One per Byte) Master Write Enable Master Output Enable Common Data Input/Output Power (+5V5%) Ground No Connection
AO-A15 EO-E1 BSO-BS3 W G DQO-DQ31 VCC VSS NC
R FO
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
W NE GN SI DE
EDI8L3265C
64Kx32 SRAM
Absolute Maximum Ratings*
Voltage on any pin relative to VSS Operating Temperature TA (Ambient) Commercial Industrial Storage Temperature Power Dissipation Output Current. Junction Temperature, TJ -0.5V to 7.0V 0C to + 70C -40C to +85C -55C to +125C 3.0 Watts 20 mA 175C
Recommended DC Operating Conditions
Parameter Supply Voltage Supply Voltage Input High Voltage Input Low Voltage Sym Min VCC 4.75 VSS 0 VIH 2.2 VIL -0.3 Typ 5.0 0 --Max Units 5.25 V 0 V VCC+0.5 V 0.8 V
AC Test Conditions
Input Pulse Levels Input Rise and Fall Times Input and Output Timing Levels Output Load VSS to 3.0V 5ns 1.5V Figure 1
*Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
(note: For TEHQZ,TGHQZ and TWLQZ, CL = 5pF)
DC Electrical Characteristics
Parameter Operating Power Supply Current Standby (TTL) Supply Current Full Standby Supply Current CMOS Input Leakage Current Output Leakage Current Output High Volltage Output Low Voltage
*Typical: TA = 25C, VCC = 5.0V *Advanced Information
Sym ICC1 ICC2 ICC3 ILI ILO VOH VOL
Conditions W= VIL, II/O = 0mA, Min Cycle E VIH, VIN VIL or VIN VIH, f=OMHz E VCC-0.2V VIN VCC-0.2V or VIN 0.2V VIN = 0V to VCC V I/O = 0V to VCC IOH = -4.0mA IOL = 8.0mA
Min
Max 12ns* 15ns 20/25ns 500 460 420 60 20 10 10 0.4 60 20 10 10 0.4 60 20 10 10 0.4
Unit ns mA mA mA A A V V
2.4
Truth Table
E H L L L L W X H X H L G BSO-3 Mode XX Standby HX Output Disable XH Output Disable LL Read XL Write Output High Z High Z High Z Dout Din Power ICC2,ICC3 ICC1 ICC1 ICC1 ICC1
Capacitance
(f=1.0MHz, VIN=VCC or VSS)
Parameter Address Lines Data Lines Write & Output Enable Lines Chip Enable Lines Sym CA CD/Q W, G E, BS Max 20 10 16 9 Unit pF pF pF bF pF
X Means Don't Care
These parameters are sampled, not 100% tested.
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
2
EDI8L3265C
64Kx32 SRAM
AC Characteristics Read Cycle
Parameter Read Cycle Time Address Access Time Chip Enable Access Time Byte Select Access Time Chip Enable to Output in Low Z (1) Byte Select to Output in Low Z Chip Disable to Output in High Z (1) Byte Select to Output in High Z Output Hold from Address Change Output Enable to Output Valid Output Enable to Output in Low Z (1) Output Disable to Output in High Z(1)
Note 1: Parameter guaranteed, but not tested. * Advanced Information
Symbol 12ns* JEDEC Alt. Min Max TAVAV TRC 12 TAVQV TAA 12 TELQV TACS 12 TBLQV TBA 12 TELQX TCLZ 3 TBLQX TBLZ 3 TEHQZ TCHZ 7 TBHQZ TBHZ 7 TAVQX TOH 3 TGLQV TOE 5 TGLQX TOLZ 2 TGHQZ TOHZ 4
15ns Min Max 15 15 15 15 3 3 8 8 3 6 2 5
20ns Min Max 20 20 20 20 3 3 10 10 3 8 2 8
25ns Min Max 25 25 25 25 3 3 10 10 3 10 0 10
Units ns ns ns ns ns ns ns ns ns ns ns ns
Read Cycle 1 - W High, G, E Low
Read Cycle 2 - W High
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
EDI8L3265C
64Kx32 SRAM
AC Characteristics Write Cycle
Symbol 12ns* 15ns 20ns JEDEC Alt. Min Max Min Max Min Max TAVAV TWC 12 15 20 TELWH TCW 8 9 15 TELEH TCW 8 9 15 Byte Select to end of Write TBLWH TBW 8 9 15 Address Setup Time TAVWL TAS 0 0 0 TAVEL TAS 0 0 0 Address Valid to End of Write TAVWH TAW 9 10 15 TAVEH TAW 9 10 15 Write Pulse Width TWLWH TWP 9 10 15 TWLEH TWP 9 10 15 Write Recovery Time TWHAX TWR 0 0 0 TEHAX TWR 0 0 0 Data Hold Time TWHDX TDH 0 0 0 TEHDX TDH 0 0 0 Write to Output in High Z (1) TWLQZ TWHZ 0 5 0 6 0 7 Data to Write Time TDVWH TDW 5 6 8 TDVEH TDW 5 6 8 Output Active from End of Write (1) TWHQX TWLZ 2 2 2 Parameter Write Cycle Time Chip Enable to End of Write
Note 1: Parameter guaranteed, but not tested. * Advanced Information
25ns Min Max Units 25 ns 20 ns 20 ns 20 ns 0 ns 0 ns 15 ns 15 ns 15 ns 15 ns 0 ns 0 ns 0 ns 0 ns 0 10 ns 12 ns 12 ns 2 ns
Write Cycle 1 - W Controlled
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
4
EDI8L3265C
64Kx32 SRAM
Write Cycle 2 - E Controlled
T NO
BSx,
Ordering Information
Part Number
Commercial (0C to 70C)
EDI8L3265C12AC* EDI8L3265C15AC EDI8L3265C20AC EDI8L3265C25AC
*Advanced Information
Package Description Package No. 99 68 Lead PLCC JEDEC M0-47AE
D DE EN M M CO RE
Speed (ns) 12 15 20 25 Package No. 99 99 99 99 5
Industrial (-40C to +85C) Part Number EDI8L3265C15AI EDI8L3265C20AI EDI8L3265C25AI Speed (ns) 15 20 25 Package No. 99 99 99
R FO
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
W NE GN SI DE
EDI8L3265C
64Kx32 SRAM EDI MCM-L Upgrade Path
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
6

▲Up To Search▲

Price & Availability of EDI8L3265C20AC

	To Download EDI8L3265C20AC Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .